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| Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR HBD681 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 Tstg ----Storage Temperature.............................. -65~150 T j ----Junction Temperature.................................... 150 PC----Collector DissipationTc=25........................ 40W VCBO ----Collector-Base Voltage................................. 100V VCEO ----Collector-Emitter Voltage.............................. 100V VEBO----Emitter-Base Voltage....................................... 5V IC----Collector Current Pulse ....................................... 6A IC----Collector Current DC .......................................... 4A IB----Base Current...................................................100mA TO-126F 1Emitter, E 2CollectorC 3BaseB ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Min Typ Max Unit Test Conditions ICBO IEBO ICES *HFE VBE(on) VCEO(SUS) Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Sustaining Voltage 200 2 500 750 2.5 2.5 100 A mA A VCB=100V, IE=0 VEB=5V, IC=0 VCE=100V, VEB=0 VCE=3V, IC=1.5mA IC=1.5A, IB=30mA VCE=3V, IC=1.5A IC=50mA, IB=0 *VCE(sat) Collector- Emitter Saturation Voltage V V * Pulse Test:PW=300S,Duty Cycie=1.5% Pulsed Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR HBD681 |
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